SEMICONDUCTOR DEVICE HAVING SPACER MADE OF MULTI-LAYER AND MANUFACTURING METHOD THEREOF

摘要

PURPOSE: A semiconductor device having spacers made of a multi-layer is provided to reduce a short channel effect, to reduce a threshold voltage change and to improve a refresh characteristic by reducing a heat budget processing. CONSTITUTION: A plurality of gate electrodes(108) are formed on a semiconductor substrate(100). Gate poly oxides(109a) are formed at a desired portion of both sidewalls of the gate electrodes(108) and connected with a predetermined portion of the semiconductor substrate(100). A silicon nitride(110b) is formed at a desired portion of both sidewalls of the gate electrodes(108) and contacted to the gate poly oxides(109a). An oxide layer(112a) is contacted with the silicon nitride(110b) and out-most spacers(114a) are contacted with the oxides(112a).