发明名称 |
NON-VOLATILE SEMICONDUCTOR MEMORY |
摘要 |
PURPOSE: To provide a non-volatile semiconductor memory in which reduction of current consumption, high speed operation, and accuracy is guaranteed. CONSTITUTION: This non-volatile semiconductor memory is provided with a transistor M6 and a cut transistor M7 diode-connected to a current mirror circuit for reading out data of a memory cell. Pre-charge voltage is made lower than power source voltage by the transistor M6. Current consumption is reduced by the transistor M7.
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申请公布号 |
KR20020066941(A) |
申请公布日期 |
2002.08.21 |
申请号 |
KR20010065011 |
申请日期 |
2001.10.22 |
申请人 |
MITSUBISHI DENKI KABUSHIKI KAISHA |
发明人 |
KAI YOSHIHIDE;NOJIRI ISAO;OHBA ATSUSHI |
分类号 |
G11C16/06;G11C16/26;G11C16/28;(IPC1-7):G11C16/26 |
主分类号 |
G11C16/06 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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