发明名称 NON-VOLATILE SEMICONDUCTOR MEMORY
摘要 PURPOSE: To provide a non-volatile semiconductor memory in which reduction of current consumption, high speed operation, and accuracy is guaranteed. CONSTITUTION: This non-volatile semiconductor memory is provided with a transistor M6 and a cut transistor M7 diode-connected to a current mirror circuit for reading out data of a memory cell. Pre-charge voltage is made lower than power source voltage by the transistor M6. Current consumption is reduced by the transistor M7.
申请公布号 KR20020066941(A) 申请公布日期 2002.08.21
申请号 KR20010065011 申请日期 2001.10.22
申请人 MITSUBISHI DENKI KABUSHIKI KAISHA 发明人 KAI YOSHIHIDE;NOJIRI ISAO;OHBA ATSUSHI
分类号 G11C16/06;G11C16/26;G11C16/28;(IPC1-7):G11C16/26 主分类号 G11C16/06
代理机构 代理人
主权项
地址