| 摘要 |
A power MOS transistor including a multiplicity of MOS transistor cells in first and a second power MOS block. The first power MOS block includes a first half of the MOS transistor cells and is equipped with a first set of source leads and drain leads for connecting in parallel the first half of the MOS transistor cells. The second power MOS block includes a second half of the MOS transistor cells and is equipped with a second set of source leads and drain leads for connecting in parallel the second half of the MOS transistor cells. The first set of source leads protrude along one direction of the first power MOS block and form a first source protruding section. The first set of drain leads protrude along an opposite direction of the first power MOS block and form a first drain protruding section. The second set of source leads protrude along one direction of the second power MOS block and form a second source protruding section. The second set of drain leads protrude along an opposite direction of the second power MOS block and form a second drain protruding section.
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