发明名称 |
Emitter ballast resistor with enhanced body effect to improve the short circuit withstand capability of power devices |
摘要 |
A power semiconductor device has an integral source/emitter ballast resistor. The gate has partial gate structures spaced apart from each other. Emitter resistors are provided beneath sidewall spacers on the ends of the gate structures. The emitter resistors have little effect on the threshold voltage under normal operating conditions, but rapidly saturate the device during short circuit conditions. This in turn increases the short circuit withstand capability o the device.
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申请公布号 |
US6437419(B1) |
申请公布日期 |
2002.08.20 |
申请号 |
US19990450872 |
申请日期 |
1999.11.29 |
申请人 |
FAIRCHILD SEMICONDUCTOR CORPORATION |
发明人 |
BHALLA ANUP;MURALEEDHARAN SHENOY PRAVEEN |
分类号 |
H01L29/749;H01L21/328;H01L21/331;H01L21/332;H01L21/336;H01L29/06;H01L29/08;H01L29/739;H01L29/78;(IPC1-7):H01L27/082 |
主分类号 |
H01L29/749 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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