Three-level semiconductor balun and method for creating the same

摘要

A three-level semiconductor balun is disclosed. In one embodiment, the balun includes a first spiral-shaped transmission line overlying a substrate. The first transmission line has first and second ends. A second spiral-shaped transmission line is substantially vertically aligned with the first transmission line. The second transmission line has a first end electrically connected to the second end of the first transmission line. A third spiral-shaped transmission line is substantially vertically aligned with the first and second transmission lines. The third transmission line has a first end electrically connected to a second end of the second transmission line. The balun may be integrated on the same chip with other RF circuit components, and is suitable for use at higher frequencies than most conventional baluns.