| 摘要 |
A structure and a process of a nonvolatile memory are provided. By forming a oxide/nitride/oxide (ONO) layer in a floating gate thin oxide (FLOTOX) memory, the same data can be programmed in one nonvolatile memory to guarantee the reliability but without using two nonvolatile memories. Besides, people can program different data separately to achieve the purpose of multi-state memory.
|
