发明名称 Electrically insulating sealing structure and its method of use in a semiconductor manufacturing apparatus
摘要 In accordance with the present invention, an insulating sealing structure useful in physical vapor deposition apparatus is provided. The insulating sealing structure is capable of functioning under high vacuum and high temperature conditions. The apparatus is a three dimensional structure having a specifically defined range of electrical, chemical, mechanical and thermal properties enabling the structure to function adequately as an insulator which does not break down at voltages ranging between about 1,500 V and about 3,000 V, which provides a seal against a vacuum of at least about 10-6 Torr, and which can function at a continuous operating temperature of about 300° F. (148.9° C.) or greater. The insulating sealing structure may be fabricated solely from particular polymeric materials or may comprise a center reinforcing member having at least one layer applied to its exterior surface, where the at least one surface layer provides at least a portion of the insulating properties and provides the surface finish necessary to make an adequate seal with a mating surface.
申请公布号 US6436509(B1) 申请公布日期 2002.08.20
申请号 US20000478940 申请日期 2000.01.06
申请人 APPLIED MATERIALS, INC. 发明人 DEMARAY RICHARD ERNEST;HERRERA MANUEL J.;ELINE DAVID F.;DESHPANDEY CHANDRA
分类号 C23C14/34;C23C14/56;H01J37/32;(IPC1-7):C23C16/00 主分类号 C23C14/34
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