发明名称 |
Integrated circuit capacitor |
摘要 |
Use of different materials for different conductive films forming plates or electrodes of one or more capacitors formed in a trench in a body of semiconductor materials allow connections to be made selectively to the plates. The films may be undercut by different etchants at respective connection apertures to avoid formation of connections or connections made by doped polysilicon of different conductivities forming connections to some plates of similarly doped polysilicon and blocking diode junctions with oppositely doped polysilicon. The blocking diodes may include a compensation implant to adjust reverse breakdown characteristics and provide transient and electrostatic discharge protection.
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申请公布号 |
US6437385(B1) |
申请公布日期 |
2002.08.20 |
申请号 |
US20000607094 |
申请日期 |
2000.06.29 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
BERTIN CLAUDE L.;MAFFITT THOMAS M.;PRICER WILBUR D.;TONTI WILLIAM R. |
分类号 |
H01L21/02;H01L21/334;H01L21/8242;H01L27/108;H01L29/94;(IPC1-7):H01L27/108;H01L29/76;H01L31/119 |
主分类号 |
H01L21/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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