发明名称 |
Semiconductor devices which utilize low K dielectrics |
摘要 |
The invention is a semiconductor device and method of fabricating the device. The device includes a semiconductor substrate with an active region, and a low dielectric constant insulating layer formed over the substrate. An additional insulating layer is formed over the low dielectric constant layer by a low temperature deposition, such as ion beam assistance deposition. A metal layer can then be formed over the additional layer using lift-off techniques. The metal layer can be patterned to form a bond pad which may be displaced from the area over the active region. Wire bonds can be made on the bond pad using ultrasonic energy.
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申请公布号 |
US6437425(B1) |
申请公布日期 |
2002.08.20 |
申请号 |
US20000487400 |
申请日期 |
2000.01.18 |
申请人 |
AGERE SYSTEMS GUARDIAN CORP |
发明人 |
CHAKRABARTI UTPAL KUMAR;ONAT BORA M;ROBINSON KEVIN CYRUS;ROY BISWANATH;WU PING |
分类号 |
H01L21/28;H01L21/3205;H01L23/52;H01L31/0224;H01L31/10;(IPC1-7):H01L23/58;H01L23/48 |
主分类号 |
H01L21/28 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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