发明名称 Low voltage reset circuit device that is not influenced by temperature and manufacturing process
摘要 A low voltage reset circuit device without being influenced by temperature and manufacturing process is formed by a first low voltage reset circuit using an energy gap circuit to generate a reference voltage, and a second low voltage reset circuit using a threshold voltage of a MOS transistor as a reference voltage. The first low voltage reset circuit is used to provide an accurate low voltage reset property,. while the circuit only works as VDD>1.2V. When VDD<1.2V, the second low voltage reset circuit still works normally for providing the desired reset signal thereby covering the low VDD voltage range.
申请公布号 US6437614(B1) 申请公布日期 2002.08.20
申请号 US20010863331 申请日期 2001.05.24
申请人 SUNPLUS TECHNOLOGY CO., LTD. 发明人 CHEN LIN-CHIEN
分类号 H03K17/14;H03K17/22;(IPC1-7):H03L7/00 主分类号 H03K17/14
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