发明名称 |
Low voltage reset circuit device that is not influenced by temperature and manufacturing process |
摘要 |
A low voltage reset circuit device without being influenced by temperature and manufacturing process is formed by a first low voltage reset circuit using an energy gap circuit to generate a reference voltage, and a second low voltage reset circuit using a threshold voltage of a MOS transistor as a reference voltage. The first low voltage reset circuit is used to provide an accurate low voltage reset property,. while the circuit only works as VDD>1.2V. When VDD<1.2V, the second low voltage reset circuit still works normally for providing the desired reset signal thereby covering the low VDD voltage range.
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申请公布号 |
US6437614(B1) |
申请公布日期 |
2002.08.20 |
申请号 |
US20010863331 |
申请日期 |
2001.05.24 |
申请人 |
SUNPLUS TECHNOLOGY CO., LTD. |
发明人 |
CHEN LIN-CHIEN |
分类号 |
H03K17/14;H03K17/22;(IPC1-7):H03L7/00 |
主分类号 |
H03K17/14 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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