发明名称 Integrated memory
摘要 The integrated memory has a first address path, via which the address terminals are connected to first selection lines of a first group and which has corresponding first lines and a first decoder circuit. In addition, the integrated memory has a second address path, via which the address terminals are connected to first selection lines of a second group and which has corresponding second lines and a second decoder circuit. The first decoder circuit is faster than the second decoder circuit. The first lines have a longer signal propagation time than the second lines.
申请公布号 US6437410(B1) 申请公布日期 2002.08.20
申请号 US20000603749 申请日期 2000.06.26
申请人 INFINEON TECHNOLOGIES AG 发明人 DIETRICH STEFAN;SAGLAM MUSA;SCHROEGMEIER PETER;MARKERT MICHAEL;SCHOENIGER SABINE;WEIS CHRISTIAN
分类号 G11C11/408;G11C7/00;G11C8/00;G11C8/10;G11C11/401;(IPC1-7):H01L29/76;H01L29/94;H01L31/062;H01L31/113;H01L31/119 主分类号 G11C11/408
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