Monomer having diol structure, polymer thereof, and negative photoresist composition and pattern forming method using the same

摘要

Disclosed is a negative photoresist which is suitable for use in photolithography using light of 220 nm or shorter like the light from the ArF excimer laser as exposure light, avoids pattern deformation originated from swelling and has a high adhesion strength to the substrate (a micro pattern is hard to be separated from the substrate) in addition to a dry etching resistance and high resolution. A negative photoresist composition contains a polymer having a diol structure having a repeating unit represented by a following formula (6), a crosslinking agent comprised of a compound containing a functional group represented by a following formula (12) and a photoacid generator which generates acid by exposure: