| 摘要 |
A method and device for removing film from a substrate are provided that take advantage of a remote plasma source to etch away undesired portions of films, such as dielectric films formed on a substrate. To that end, the method includes forming a plasma remotely with respect to the process chamber, from which a flow is created that is directed toward the substrate. The substrate is of a type having opposed major surfaces with a peripheral surface extending therebetween. A film, such as a dielectric film, is disposed on one of the opposed major surfaces and on the peripheral surface. The opposed major surface having the film thereon is shielded from the flow of reactive radicals while the peripheral surface is left exposed. In this fashion, the flow is maintained for a sufficient amount of time to remove film present on the peripheral surface.
|
