发明名称 |
Photoelectric conversion device and manufacturing method thereof |
摘要 |
A method of manufacturing a photoelectric conversion device according to the present invention comprises the steps of: applying numerous glass particles having a particle size before baking being 5 to 25% of that of crystalline semiconductor particles to a substrate having an electrode of one side; depositing the crystalline semiconductor particles on the layer of the glass particles; pressing the crystalline semiconductor particles against the substrate; and subjecting them to baking, whereby manufacturing a photoelectric conversion device in which the crystalline semiconductor particles and the substrate have been joined together as well as an insulator has been interposed among the crystalline semiconductor particles. Accordingly, the photoelectric conversion device has good conversion efficiency and is manufactured at a low cost.
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申请公布号 |
US6437234(B1) |
申请公布日期 |
2002.08.20 |
申请号 |
US20010917140 |
申请日期 |
2001.07.26 |
申请人 |
KYOCERA CORPORATION |
发明人 |
KYODA TAKESHI;SUGAWARA SHIN;ARIMUNE HISAO |
分类号 |
H01L31/00;H01L31/0352;H01L31/18;(IPC1-7):H01L31/035 |
主分类号 |
H01L31/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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