| 发明名称 |
Ferroelectric random access memory (FeRAM) having storage capacitors with different coercive voltages |
| 摘要 |
The invention relates to a ferroelectric RAM configuration, including a number of storage cells, each of which has a selection transistor and a capacitor device with a ferroelectric dielectric. The capacitor device includes at least two capacitors whose coercive voltages are different from each other.
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| 申请公布号 |
US6438019(B2) |
申请公布日期 |
2002.08.20 |
| 申请号 |
US20010756085 |
申请日期 |
2001.01.08 |
| 申请人 |
INFINEON TECHNOLOGIES AG |
发明人 |
HARTNER WALTER;SCHINDLER GUENTHER;HINTERMAIER FRANK |
| 分类号 |
G11C11/22;H01L21/8246;H01L27/105;H01L27/115;(IPC1-7):G11C11/02 |
主分类号 |
G11C11/22 |
| 代理机构 |
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