| 摘要 |
An object is to provide a semiconductor device having an insulated-gate transistor which operates at high speed with low power consumption and a manufacturing method thereof. Two source/drain regions (9) are selectively formed in the surface of a transistor formation region in a Si substrate (1), a stacked gate insulating film (25) is formed on the channel region between the source/drain regions (9, 9) in the Si substrate (1), and a gate electrode (3) is formed on the stacked gate insulating film (25). The stacked gate insulating film (25) has a three-layer structure composed of a HfSiO2 film (21), a HfO2 film (22) and a HfSiO2 film (23) each having a higher dielectric constant than Sio2. The HfSiO2 film (21) is less reactive than the HfO2 film (22) at the interface with the Si substrate (1) and the HfSiO2 film (23) is less reactive than the HfO2 film (22) at the interface with the gate electrode (3) (polysilicon layer (4)).
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