| 摘要 |
An oxide dielectric film (7) is formed of barium strontium titanate to have a thickness of 300 to 600 Å, and a first platinum layer (81) is deposited thereon by, e.g., sputtering at a temperature not higher than 250° C. to have a thickness of 250 to 500 Å. Further, a second platinum layer (82) is deposited on the first platinum layer (81) by, e.g., sputtering at a temperature of 250 to 500° C. to have a thickness of 250 to 500 Å. Since the first platinum layer (81) has less grain boundary and is hard to connect to that of the second platinum layer (82), with less grain boundary diffusion caused, even if a hydrogen sintering of an aluminum interconnection layer (11) is performed, reduction species are unlikely to reach the oxide dielectric film (7) through the grain boundary. That suppresses deterioration of the oxide dielectric film (7) to avoid an increase of leak current therein. Moreover, since the surface area of the second platinum layer (82) increases, the adherence between the second platinum layer (82) and an interlayer insulating film (10) provided thereon is improved.
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