发明名称 |
Plasma CVD apparatus and plasma processing method |
摘要 |
A plasma CVD apparatus comprising a substantially enclosed reaction chamber containing substrate holding means and a cathode electrode arranged therein, wherein a high frequency power from a high frequency power source is supplied to said cathode electrode to generate plasma between said substrate holding means having a subtrate positioned thereon and said cathode electrode whereby plasma-processing said substrate, characterized in that said cathode electrode comprises a plurality of conductor members situated on substantially the same axis which are capacitively coupled by a dielectric member.A plasma-processing method using said cathode electrode.
|
申请公布号 |
US6435130(B1) |
申请公布日期 |
2002.08.20 |
申请号 |
US19970916540 |
申请日期 |
1997.08.22 |
申请人 |
CANON KABUSHIKI KAISHA |
发明人 |
TAKAKI SATOSHI;SEGI YOSHIO;YAMAGAMI ATSUSHI;KATAGIRI HIROYUKI;MURAYAMA HITOSHI;TAKAI YASUYOSHI |
分类号 |
C23C16/24;C23C16/44;C23C16/455;C23C16/509;G03G5/082;H01J37/32;(IPC1-7):C23C16/509;C23C16/505;C23C16/503 |
主分类号 |
C23C16/24 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|