发明名称 INTEGRATED VERTICAL SPIRAL INDUCTOR ON SEMICONDUCTOR MATERIAL
摘要 A new structure is provided for the creation of an inductor on the surface of a silicon semiconductor substrate- The inductor is of spiral design and perpendicular to the plane of the underlying substrate. Conductor line width can be selected as narrow or wide, ferromagnetic material can be used to fill the spaces between the conductors of the spiral inductor. The spiral inductor of the invention can further by used in series or in series with conventional horizontal inductors. <IMAGE>
申请公布号 SG90742(A1) 申请公布日期 2002.08.20
申请号 SG20000004484 申请日期 2000.08.15
申请人 CHARTERED SEMICONDUCTOR MANUFACTURING LTD 发明人 YEO KIAT SENG;TAN HAI PENG;MA JIAN GUO;DO MANH ANH;JOHNNY CHEW KOK WAI
分类号 H01F17/00;H01F41/04;H01L23/522;H01L23/64;(IPC1-7):H01L23/64 主分类号 H01F17/00
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