发明名称 APPARATUS AND METHOD FOR CONTROLLING ZERO MARGIN ENABLE OF SENSE AMPLIFIER FOR USE IN SEMICONDUCTOR MEMORY DEVICE
摘要 PURPOSE: An apparatus and a method for controlling a zero margin enable of a sense amplifier for use in a semiconductor memory device is provided to perform a fuse cutting after confirming an optimum sense amplifier enable time for each chip in the semiconductor memory device beforehand. CONSTITUTION: A method for controlling a zero margin enable of a sense amplifier for use in a semiconductor memory device provided with a test part for determining a zero margin enable time of the sense amplifier through a test utilizing a variable length code and a fuse array includes steps of: performing(130) a test with varying the enable time until the enable of the sense amplifier becomes the zero margin and cutting(170) a corresponding fuse to become a code value which is used when the enable of the sense amplifier becomes the zero margin at the test step.
申请公布号 KR20020066478(A) 申请公布日期 2002.08.19
申请号 KR20010006677 申请日期 2001.02.12
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 LEE, GWANG JIN;LEE, JONG CHEOL
分类号 G11C29/00;G11C7/06;G11C7/08;G11C7/10;G11C29/02;(IPC1-7):G11C29/00 主分类号 G11C29/00
代理机构 代理人
主权项
地址