| 摘要 |
PURPOSE: A bottom substrate for an IPS-LCD and a manufacturing method thereof are provided to omit the protection film forming step and carry out the heat treatment for plasticity of an orientation film simultaneously with the annealing of thin film transistors, thereby reducing the number of masks and the processing time period. CONSTITUTION: A bottom substrate for an IPS-LCD(In-Plane Switching Liquid Crystal Display) includes a transparent substrate(100), a gate wire formed on the transparent substrate including gate electrodes in the first direction, a common wire formed in the first direction and a plurality of common electrodes branched from the common wire in the second direction, a gate insulating film formed on the gate wire and the common electrodes, a semiconductor layer formed of amorphous silicon layer and an impurity semiconductor layer on the gate insulating film, data lines formed in the second direction of the semiconductor layer and source and drain electrodes connected to the data lines, a plurality of pixel electrodes(116) branched from a lead-in wire extended from the drain electrodes and amiss with the common electrodes, and an orientation film(118) on the pixel electrodes in the vicinity of the pixel electrodes.
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