| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a method for chemical and mechanical planarization capable of surely eliminating a residue of a silicon dioxide, without requiring reverse mask etching work or re-removing work, improving the grinding control capability, reducing the cost and improving the yield. SOLUTION: The method for chemical and mechanical planarization comprises a step (a) of preparing a planarizing liquid having a first pH and a grinding pad, a step (b) of distributing the liquid having the first pH to the pad, a step (c)of applying a prescribed pressure to the wafer and the pad, a step (d) of executing grinding of first stage by moving at least one of the wafer and the pad, and a step (e) of changing the first pH value of the liquid to a second pH and executing polishing of a second stage.</p> |
