| 摘要 |
PROBLEM TO BE SOLVED: To provide the method of reprocessing photoresist layers for preventing reflection prevention capability from being reduced in an oxysilicon nitride layer. SOLUTION: A silicon chip is provided, where the silicon chip has an insulating layer, bottom-section reflection prevention coating, and the photoresist layer on the coating. The photoresist layer has already been exposed and developed. To remove the greater part of the photoresist layer, wet etching work is carried out. To remove a cured residual photoresist material, low-temperature plasma treatment is executed, where the low-temperature plasma treatment prevents a change in the structure of reflection prevention coating. A new photoresist layer is formed on a bottom-section reflection prevention coating. |
