BARRIER LAYER FOR COPPER COATING IN MANUFACTURE OF INTEGRATED CIRCUIT

摘要

PROBLEM TO BE SOLVED: To provide an integrated circuit having a conductive barrier layer, but is effective for a copper coating in the manufacture of the integrated circuit. SOLUTION: In the manufacture of an integrated circuit, a barrier layer 20 of metal silicon compound layer such as a heat-resistant metal silicon nitride compound layer formed in an amorphous state is provided in the integrated circuit. The layer 20 has a comparatively low compositional ratio of a silicon thin film and a nitrogen thin film if existing, and provides a low specific resistance combined with a high diffusion barrier property which is brought by the amorphous form of the thin films. The disclosed instances of the layer 20 are tantalum, silicon and nitrogen compound layers. The layer 20 can be used as the layer under a copper-coated layer 22. Moreover, the layer 20 can be used for one part or all of the lower plate of a ferroelectric capacitor.