| 摘要 |
PROBLEM TO BE SOLVED: To monolithically integrate different kinds of element structures without losing the characteristics of elements. SOLUTION: A mesa stripe structure 26 is constituted of a first linear area 41 having a linear mesa stripe structure, a transition area 42 which is in contact with the area 41 and has such a mesa stripe structure that the width of a mesa gradually changes, and a second linear area 43 which is in contact with the transition area 42 and with an AWG area and has a linear mesa stripe structure. Then crystals are selectively grown by the metal organic vapor phase epitaxial growth method by suppressing the growth of crystals on the mesa stripe structure 26 and the abnormal growth of InP on an SiO2 film 35. Therefore, the different kinds of element structures can be integrated monolithically without generating any abnormally grown area which becomes a large absorption loss area in the case of an LD, etc., nor losing the characteristics of elements. |
