| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device which can suppress generation of a short channel effects and the junction leakage current and which has a diffusion layer of a low resistance and a short transmission delay time. SOLUTION: On a side wall of the gate electrode 3 projecting on a substrate 1, a structure having a plurality of laminated films, that is, a plurality of side wall layer structures 4 and 5 are disposed. A gap 10a generated by the separation of the side wall layer 5 from the substrate 1 is filled with at least part of an elevated source and drain region 8.
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