发明名称 |
SUBSTRATE PROCESSOR AND SUBSTRATE-PROCESSING METHOD |
摘要 |
PROBLEM TO BE SOLVED: To suppress outside air from infiltrating into a reaction chamber and a vapor phase from backflow, while the reaction chamber is opened to the outside via a substrate-inserting/ejecting opening. SOLUTION: A vertical CVD apparatus 200 has a second gas feed system 240 and a second bypass line 264. The gas feed system 240 feeds an inert gas in a space 3a, between an outer and inner tubes 1A, 2A of a reaction furnace 211 during loading and unloading of a boat. The bypass line 264 evacuates the atmosphere in a reaction chamber 1a, by a slow exhaust process during the loading and unloading of the boat.
|
申请公布号 |
JP2002231646(A) |
申请公布日期 |
2002.08.16 |
申请号 |
JP20010359414 |
申请日期 |
2001.11.26 |
申请人 |
HITACHI KOKUSAI ELECTRIC INC |
发明人 |
NAKAMURA NAOTO;SAKAMOTO ICHIRO;MAEDA KIYOHIKO |
分类号 |
C23C16/455;H01L21/205;(IPC1-7):H01L21/205 |
主分类号 |
C23C16/455 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|