发明名称 SUBSTRATE PROCESSOR AND SUBSTRATE-PROCESSING METHOD
摘要 PROBLEM TO BE SOLVED: To suppress outside air from infiltrating into a reaction chamber and a vapor phase from backflow, while the reaction chamber is opened to the outside via a substrate-inserting/ejecting opening. SOLUTION: A vertical CVD apparatus 200 has a second gas feed system 240 and a second bypass line 264. The gas feed system 240 feeds an inert gas in a space 3a, between an outer and inner tubes 1A, 2A of a reaction furnace 211 during loading and unloading of a boat. The bypass line 264 evacuates the atmosphere in a reaction chamber 1a, by a slow exhaust process during the loading and unloading of the boat.
申请公布号 JP2002231646(A) 申请公布日期 2002.08.16
申请号 JP20010359414 申请日期 2001.11.26
申请人 HITACHI KOKUSAI ELECTRIC INC 发明人 NAKAMURA NAOTO;SAKAMOTO ICHIRO;MAEDA KIYOHIKO
分类号 C23C16/455;H01L21/205;(IPC1-7):H01L21/205 主分类号 C23C16/455
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