| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor memory in which superior electric charge holding characteristic can be obtained by reducing the leakage current of a storage node. SOLUTION: A memory cell is constituted of transistors and stack type capacitors. A pattern of a gate electrode 5 of a transistor is formed as a word line continued in one direction. A pattern of an upper electrode 23 of a capacitor is formed as a plate line being in parallel to the word line. The plate line is driven by drive voltage being same polarity as the word line and lower than the word line synchronizing with the corresponding word line. |
