| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor memory of which the area of a first band region is small and the operation speed is high. SOLUTION: This DRAM is provided with two main column selecting lines MCSL provided at each sense amplifier band 1, eight sub-column selecting lines SCSL provided at each sense amplifier band 1 corresponding to each memory block MB, two sub-decoder column selecting lines SDCSL provided at each sub-decoder band 2, and sub-column decoders SCD provided at each intersection of the sense amplifiers band 1 and the sub-decoders band 2 and selecting a sub-column selecting line SCSL out of correspondent eight sub-column selecting lines SCSL conforming to a signal from four selecting lines MCSL, SDCSL. The area of a sense amplifier band may be small when it is compared with that in the conventional case in which all signal lines for selecting column are provided in a sense amplifier band. |
