| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device manufacturing apparatus, capable of detecting the light emission intensity of a plasma even in a very small working area, thereby enabling control of a working finish point with high precision. SOLUTION: The apparatus comprises a reaction chamber 21 for housing a substrate W inside and forming a plasma, a detector 30 for measuring light emission in the reaction chamber 21 to detect the reacting condition of the plasma, based on the light intensity at a prescribed wavelength, and a sheet beam optical system 40 for transferring light emission in the reaction chamber 21 to the detector 30, via a window 23 installed on the reaction chamber 21. The optical system 40 has a sheet-like view field area Q in the reaction chamber 21. |
