| 摘要 |
PROBLEM TO BE SOLVED: To provide a lateral JFET having a structure that the JFET maintains a high breakdown strength performance and moreover, the on-resistance of the JFET can be reduced and to provide a method of manufacturing the JFET. SOLUTION: A lateral JFET is constituted in a structure that a first conductivity type semiconductor layer 2 is arranged on a semiconductor substrate, second conductivity type semiconductor layers 3 and 4 containing second conductivity type impurities are arranged on the layer 2, a second conductivity type electrode layer 5 is arranged on the layer 4, a trench 11 of a depth to reach within the layers 3 and 4 is arranged in the layers 3 and 4 and first conductivity type impurity regions 7a and 7b containing first conductivity type impurities are arranged respectively in the layers 3 and 4 under the lower part of the bottom of the trench 11.
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