| 摘要 |
PROBLEM TO BE SOLVED: To realize a working method using wet etching which does not deteriorate element characteristics, because when working of a nitride based compound semiconductor layer is performed by dry etching, etching damage is left, which becomes a cause of deterioration of element characteristics. SOLUTION: This etching method is provided with a process wherein ion implantation is performed to a nitride based compound semiconductor layer 2 to form a region 4 to be etched by deteriorating crystallinity, and a process wherein the region 4 where crystallinity is deteriorated is removed selectively with respect to a region where crystallinity is not deteriorated by wet etching.
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