| 摘要 |
PROBLEM TO BE SOLVED: To enable use of the same vacuum system as one used in a case of normal film formation during in-situ cleaning, regarding semiconductor manufacturing equipment which executes the in-situ cleaning after a film is formed on a wafer in an insulating film forming process. SOLUTION: A process chamber 201 for performing a treatment wherein an insulating film is formed on a semiconductor wafer 202 is installed. A vacuum system including a turbo-molecular pump 211 is connected with the process chamber 201. A throttle valve 209 for pressure control, a main valve 210 for cutting off connection between the process chamber 201 and the turbo-molecule pump 211, and an on-off valve 214 provided with a valve member having a prescribed aperture, are arranged between the process chamber 201 and the turbo-molecular pump 211. A control device is installed which puts the on-off valve 214 in an opened state when the film forming treatment is performed and in a closed state when the in-situ cleaning is performed.
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