| 摘要 |
PROBLEM TO BE SOLVED: To solve the problem that an appropriate silicide layer is hard to form in each diffusion layer, or the like. SOLUTION: This manufacturing method includes a process for forming a resist pattern 54 that forms an N+ diffusion layer 19 after a first silicide protection film 52 is deposited, a process for removing the first silicide protection film 52 that is exposed from an opening 53 in the resist pattern 54 and for forming a first opening 55, a process for forming a first silicide layer 56 on the N+ diffusion layer 19 that is exposed from the first opening 55, a process for forming a resist pattern 59 that forms an P+ diffusion layer 21 after a second silicide protection film 57 is deposited, a process for removing the first and second silicide protection films 52 and 57 that are exposed from an opening 58 in the resist pattern 59 and for forming a second opening 60, and a process for forming a second silicide layer 61 on the P+ diffusion layer 21 that is exposed from the second opening 60. |
