| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a semiconductor memory and a sense amplifier control circuit therefor which has a sufficient supply capability of electric power, can realize a high sensing speed, and can deal with making the device minute. SOLUTION: This device includes a plurality of memory cell array blocks 10 arranged in a matrix state, a plurality of bit line sense amplifier array blocks 21, 22 sensing and amplifying data stored in that, a plurality of sensing power supply means 31-34 controlled by sensing power supply control signals RTOEN0, /SEN0, or the like and supplying sensing power RTO0, /S0, or the like to each bit line sense amplifier array block, and a plurality of switching means 51a-54a and 51b-54b controlled by sensing power supply control signals RTOEN0, /SEN0, and connecting supply lines of the sensing power supply means 31-34 of two or more commonly to supply lines of common sensing power RTOC0, SCO, or the like.</p> |
