| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a composition for polishing that can inhibit etching rate on copper, without sacrificing the polishing speed to the copper of a semiconductor device, including at least a copper film and a tantalum-containing compound film, and to provide a polishing method using the composition for polishing. SOLUTION: This composition for polishing is to contain each constituent of at least one kind of abrasive (a) selected from among a group of silicon dioxide, aluminum oxide, cerium oxide, zirconium oxide, and titanium oxide, aliphatic carboxylic acid (b), at least one kind of basic compound (c) selected from among a group of ammonium salt, alkali metal salt, alkaline earth metal salt, an organic amine compound, and fourth ammonium salt, at least one kind of polishing acceleration compound (d) selected from among a group of citric acid, oxalic acid, tartaric acid, glycine,αalanine, and histidine, at least one kind of anticorrosive (e) selected from among a group of benzotriazole, benzoimidazole, triazole, imidazole, and tolyltriazole, hydrogen peroxide (f), and water (g). The polishing method uses this composition for polishing.</p> |
