| 摘要 |
<p>PROBLEM TO BE SOLVED: To solve the problem in a conventional thin film transistor such as film cohesion, etc., due to the heat in an after process in the case of using an Ag alloy film as the source and drain electrode film of an amorphous silicon thin film transistor. SOLUTION: SiNx, SiO2, Ti, Ta, Mo, or MoW is stacked on the source drain film Ag alloy film, and then, a collective pattern is made by dry etching or wet etching.</p> |
