| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for manufacturing a semiconductor device having a pattern smaller than resolution limit of a photolithography device. SOLUTION: A workpiece 1b is anisotropically etched by using a first resist pattern 2 as a mask, and a pattern of the workpiece 1b is formed. After the first resist pattern 2 is removed, the removed part 1a is filled, and a second resist pattern 3 which overlaps slightly with the left part 1b is formed. The left part 1b is anisotropically etched further by using a second resist pattern 3 as a mask, and a smaller pattern of the workpiece is formed. The second resist pattern 3 is removed. |
