发明名称 COATING FILM TREATMENT EQUIPMENT AND METHOD THEREOF
摘要 PROBLEM TO BE SOLVED: To provide coating film treatment equipment and a coating film treatment method wherein treatment gas having a prescribed composition can be supplied stably to a treatment chamber for treatment a coating film. SOLUTION: An SOD system is one embodiment of coating film treatment equipment and forms an interlayer insulating film on a surface of a semiconductor wafer W. The system is provided with a chamber 61 in which a semiconductor wafer W is accommodated, a first gas supplying mechanism which supplies ammonia gas in the chamber 61 while flow rate of the ammonia gas is controlled by a mass flow controller (MFC) 37, and a second gas supplying mechanism which supplies nitrogen gas containing steam of a prescribed concentration in the chamber 61 while flow rate of the nitrogen gas is controlled by a mass flow controller (MFC) 38. As a result, treatment gas having a specified composition can be supplied stably in the chamber 61.
申请公布号 JP2002231708(A) 申请公布日期 2002.08.16
申请号 JP20010022261 申请日期 2001.01.30
申请人 TOKYO ELECTRON LTD 发明人 NAGASHIMA SHINJI
分类号 B05C9/12;B05D3/04;H01L21/00;H01L21/31;H01L21/316;(IPC1-7):H01L21/31 主分类号 B05C9/12
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