| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for preventing formation of recess and erosion in CMP. SOLUTION: A first dielectric layer 14 and a second dielectric layer 16 whose wet etching rate is smaller than that of the first dielectric layer are formed in order on a surface of the semiconductor substrate 10. By dry etching, a plurality of first holes which penetrate the second layer and are fitted in the first layer to a prescribed depth are formed in the area of prescribed contact holes. In the first holes, the first layer is etched in the lateral direction. In the area of the prescribe contact holes, a plurality of second holes (ratio of the aperture diameter to the diameter of the area of the prescribed contact holes is smaller than 0.55) are formed by wet etching process. An electric conduction layer 22 is so formed that the second holes are filled, and CMP process is executed in order to eliminate the electric conduction layer partly, in such a manner that the surface of the electric conduction layer and the second dielectric layer become identical.
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