发明名称 SEMICONDUCTOR DEVICE
摘要 <p>PROBLEM TO BE SOLVED: To save power consumption by eliminating the need of ensuring an extra area in a SRAM as a area for saving data stored in a DRAM to the SRAM during shifting to a power saving mode, in a semiconductor device provided with the DRAM and the SRAM. SOLUTION: When a power saving mode shift command is inputted, a stack saving processing portion 105 saving data stored in the DRAM 103 in a stack area 102b of the SRAM 102. After the data stored in the DRAM 103 is saved in the stack area 102b of the SRAM 102, a power saving mode shift processing portion 104 stops a refresh action of the DRAM 103, and shifts to the power saving mode.</p>
申请公布号 JP2002229864(A) 申请公布日期 2002.08.16
申请号 JP20010021322 申请日期 2001.01.30
申请人 MATSUSHITA ELECTRIC IND CO LTD 发明人 TAKEUCHI HIROYUKI;SUMI FUMIO
分类号 G06F1/32;G06F12/16;G06F15/78;(IPC1-7):G06F12/16 主分类号 G06F1/32
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