| 摘要 |
PROBLEM TO BE SOLVED: To enhance the reliability and improve the yield by preventing the electric continuity between a gate electrode.wiring and a thin film semiconductor region (active layer), in a CMOS circuit where n-channel TFTs and p- channel TFTs exist mixedly. SOLUTION: The breakage of the gate insulating film at this section is prevented by putting the vicinity of the end of a crossed film semiconductor region, especially, the region adjacent to the section that the gate electrode crosses in the same conductivity type as an intrinsic semiconductor or a channel formation region. As a result, this section shows N type, and it prevents the two impurity regions from being electrically continuous.
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