| 摘要 |
<p>PROBLEM TO BE SOLVED: To solve the problem, in which polycrystalline silicon or single-crystal silicon having large crystal grains being unable to be obtained, because the silicon grains are restrained from growing, in a method of crystallizing an amorphous silicon material through irradiation of its front face with a laser beam. SOLUTION: An insulating film 17 is formed on an amorphous silicon 13, and irregularities are provided on the surface of the insulating film 17. When the insulating film 17 is irradiated with a laser beam, the laser beam is apt to be concentrated in a certain region due to refraction phenomenon of light, and an amorphous silicon region of high temperature is produced. Another region, where the laser beam is not concentrated, becomes a region of low temperature. Crystallization starts from the region of low temperature, and the high and low temperature distribution is provided to amorphous silicon, so that polycrystalline silicon or single-crystal silicon of large grain diameter is formed.</p> |
