COMPLETELY REVERSED SOIMOSFET

摘要

PROBLEM TO BE SOLVED: To provide a completely reversed SOIMOSFET which can raise effective mutual conductance (Gm). SOLUTION: This SOIMOSFET is equipped with a channel region 18 consisting of the section corresponding to the section right below the gate electrode 15 out of a top silicon layer 13, and the source region 16 and the drain region 17 consisting of the sections adjacent to this channel region 18 out of the top silicon layer 13. This is made so that the channel region 18 may be reversed throughout its thickness. The source resistance RS that the source region 16 shows fulfills the relation of (1/gm)>RS to the mutual inductance gm of the channel region 18 itself.