| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for manufacturing a semiconductor element having a contact pad. SOLUTION: In the method for manufacturing the semiconductor element according to the present invention, a plurality of parallel wiring patterns 60 are formed on the semiconductor substrate 51. A lower part interlayer dielectric 67 that covers the wiring patterns 60 and the semiconductor substrate 51 is formed. A hard mask 69 is formed on the lower part interlayer dielectric 67. By etching the lower part interlayer dielectric 67 using the hard mask 69 as an etching mask, a self-aligned contact hole 71, by which the semiconductor substrate 51 between the wiring patterns 60 is exposed, is formed. A surface treatment step is applied to the surface of the semiconductor substrate 51, which is exposed by the self-aligned contact hole 71. After the surface treatment step have been completed, a first conductive film 75 is conformally formed on the entire surface on the semiconductor substrate and then a protrusion 77 is formed on upper-part side wall of the self-aligned contact hole 71. The protrusion 77 is removed by anisotropically etching the first conductive film 75. After the protrusion 77 has been removed, a second conductive film 79, with which the self-arranged contact hole 71 is completely filled, is formed on the entire surface on semiconductor substrate. |
