| 摘要 |
PROBLEM TO BE SOLVED: To form a connection hole 27 for connecting a storage node to a semiconductor substrate 1 to a bit line 24 in self-alignment manner, in a DRAM semiconductor device that provides the bit line 24 in a direction for crossing a word line 17 in the upper layer of the word line 17, and additionally provides the storage node of a capacitor in the farther upper layer thereof. SOLUTION: An opening 21 opened in self-alignment manner is buried between the word lines 18 for forming a plug electrode 22. By reactive ion etching using an Ar/C5F8/CH2F2 gas, interlayer oxide films 23 and 26 are opened in self-alignment manner to the bit line 24 covered with a silicon nitride film 25 for forming the connection hole 27 that reaches the plug electrode 22. Contact area is secured by allowing the end section of the connection hole 27 to deviate from the plug electrode 22 in a direction parallel with a bit line wiring direction when the connection hole is opened. Etching stop is carried out by a silicon nitride film 19 for covering the work line 17 in a lower layer. |
