| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device and a method for manufacturing the same capable of suppressing cracking by relaxing stresses acting on an opening caused by the difference of film stresses. SOLUTION: In a memory cell forming region of a silicon substrate 1, a capacitor contact hole 9 is formed penetrating a TEOS film 8, a silicon nitride film 7 and a silicon film 5. In a dicing line region, an opening 10a is formed as a relatively large pattern in size such as alignment marks. A plurality of fine openings 11 which are sufficiently smaller than the opening 10a in size are formed to be dotted around the periphery of the opening 10a. |
