发明名称 METHOD OF FORMING RESIST PATTERN AND METHOD OF MANUFACTURING ACTIVE MATRIX SUBSTRATE USING THE PATTERN
摘要 PROBLEM TO BE SOLVED: To solve the problem raised when a method, etc., of changing the post-baking temperature in a developing process, in which resists having different sensitivity are applied in multiple layers proposed, is used as a method of controlling the tapered shapes of the side faces of resists used at the formation of the lower-layer wiring of a device having a multilayered wiring structure in which two kinds of resists and their supply systems become necessary, and when the baking temperature is raised, the release properties of the resists are deteriorated, and in addition, when the temperature is lowered, the adhesive properties of the resists too films to be etched are deteriorated. SOLUTION: At the coating of two layers of resist films, the dry quantities of the lower and upper resist films 3 and 4 after coating are made to be different from each other, by making the dry quantity of the lower resist film 3 larger than that of the upper resist film 4, so that the retreating quantity of an upper resist film 14 becomes larger at the developing of the film 14. Consequently, a resist pattern presenting a gentler forward-tapered angle θ can be obtained.
申请公布号 JP2002231603(A) 申请公布日期 2002.08.16
申请号 JP20010021724 申请日期 2001.01.30
申请人 NEC KAGOSHIMA LTD 发明人 YAMASHITA MASAMI
分类号 G03F7/095;G03F7/40;H01L21/027;H01L21/336;H01L29/786 主分类号 G03F7/095
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