| 摘要 |
PROBLEM TO BE SOLVED: To provide a nitride semiconductor substrate, which facilitates discrimination of a protective film from other regions on the substrate and also recognizing the protective film, after growing a nitride semiconductor layer and is expected to improve the accuracy and the efficiency in manufacturing processes of light-emitting diodes, laser elements, etc., on a substrate. SOLUTION: A nitride semiconductor layer is grown on a substrate which is dissimilar to the nitride semiconductor, a protective film having mirror properties for transmitting specified wavelength lights is formed, and a nitride semiconductor layer is formed thereon, to form a nitride semiconductor substrate of proper recognition in later steps. |
