发明名称 BIAS GENERATION CIRCUIT
摘要 PROBLEM TO BE SOLVED: To provide a bias generation device to generate a bias voltage for resetting a CCD solid state imaging device, etc., having a bias circuit capable of widely adjusting the bias voltage. SOLUTION: The bias generation circuit of this invention comprises a first MOS transistor 1 whose drain is connected to a power terminal VDD and source and gate are connected to a bias voltage output node N, a second MOS transistor whose drain and gate are connected to the bias voltage output node N, a MOS circuit 3 connected between the bias voltage output node N and a ground GRD and including one or a plurality of a third MOS transistors 3-1 to 3-4 whose gates are connected to their own sources, fuse elements 4-1 to 4-4 for substantially keeping alive or killing the third MOS transistors 3-1 to 3-4 by being fusion-cut and voltage apply terminals for the fusion cut to apply the voltage to the fuse elements for fusion cutting.
申请公布号 JP2002231889(A) 申请公布日期 2002.08.16
申请号 JP20010022809 申请日期 2001.01.31
申请人 SONY CORP 发明人 YOSHIMITSU KOUYA;ANJIYOU KENICHIROU
分类号 H01L27/148;H01L21/82;H01L21/822;H01L27/04;H04N5/335;H04N5/341;H04N5/372;(IPC1-7):H01L27/04 主分类号 H01L27/148
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